論文 2002
- M. Shahjahan, N. Takahashi, K. Sawada, M. Ishida
Fabrication and Electrical Characterizaion of Ultrathin Crystalline Al2O3 Gate Dielectric Films on Si(100) and Si(111) by Molecular Beam Epitaxy
Jpn. J. Appl. Phys., Vol.41, Part 2, No. 12B, pp.L1474-L1477, Dec., 2002.
doi : 10.1143/JJAP.41.L1474 - H. Takao, M. Ishida, K. Sawada
A Pneumatically Actuated Full In-Channel Microvalve with MOSFET-Like Function in Fluid Channel Networks
J. Microelectromech. Syst., Vol.11, No. 5, pp.421-426, Oct., 2002.
doi : 10.1109/JMEMS.2002.803414 - 田部道晴, 澤田和明, ラトノ ヌルヤディ, 杉本幹生, 石川靖彦, 石田誠
シリコンナノ構造からの電子の電界放出
IEICE Trans. Electron., Vol.J85-C, No.9, pp.803-809, Sep., 2002. - H. Takao, F. Ina, K. Sawada, M. Ishida
Clock Feedthrough Reduction of CMOS Autozeroed Operational Amplifiers by Two-Stage Self-Compensation
IEICE Trans. Electron., Vol.E85-C, No. 7, pp.1499-1505, Jul., 2002. - K. Sawada M. Tabe, Y. Ishikawa, M. Ishida
Field Electron Emission Device Using Silicon Nano-Protrusions
J. Vac. Sci. Technol. B, Vol.20, Issue 3, pp.787-790, May, 2002.
doi : 10.1116/1.1467661 - M. Akiyama, M. Hanada, H. Takao, K. Sawada, M. Ishida
Excess noise characterization of hydrogenated amorphous silicon p-I-n photo diode films
Jpn. J. Appl. Phys., Vol.41, Part 1, No. 4B, pp.2552-2555, Apr., 2002.
doi : 10.1143/JJAP.41.2552 - M. Shahjahan,Y. Koji, K. Sawand, M. Ishida
Fabrication of resonance Tunnel diodes by γAl2O3/Si multiple Heterosutructute
Jpn. J. Appl. Phys., Vol.41, Part 1, No. 4B, pp.2602-2605, Apr., 2002.
doi : 10.1143/JJAP.41.2602 - K. Tomita, D. Takamuro, K. Sawada, M. Ishida
Electron Emission Type Infrared Imaging Sensor Using Ferroelectric Thin Plate
Sens. Actuator A-Phys., Vol.97-98, pp.147-152, Apr., 2002.
doi : 10.1016/S0924-4247(01)00802-0 - S. Kawahito, K. Sawada, K. Tada, M. Ishida, Y. Tadokoro
A Chopperless Pyroelectric Active Pixel Infrared Image Sensor Using Chip Shift Operation
Sens. Actuator A-Phys., Vol.97-98, pp.147-152, Apr., 2002. - S. Kawahito, K. Sawada, K. Tada, M. Ishida, Y. Tadokoro
Active pixel circuits and signal processing techniques for a chopperless pyroelectric infrared image sensor
Sens. Actuator A－Phys., Vol.97-98, pp.184-192, Apr., 2002.
doi : 10.1016/S0924-4247(02)00024-9 - T. Kawano, Y. Kato, M. Futagawa, H. Takao. K. Sawada, M. Ishida
Fabrication and Properties of Ultra Small Si Wire Arrays with Circuits by Vapor-Liquid-Solid Growth
Sens. Actuator A－Phys., Vol.97-98, pp.709-715, April 2002.
doi : 10.1016/S0924-4247(02)00008-0 - S. Kawahito, K. Sawada, K. Tada, M. Ishida, Y. Tadokoro
An Improved Image Reconstruction Method for a Chopperless Pyroelectric Infrared Image Sensor
IEEJ Trans. Sens. Micromach., Vol.122, No.3, pp.166-171, Mar., 2002. - A. Wakahara, H. Oishi, H. Okada, A. Yoshida, Y. Koji, M. Ishida
Organometallic vapor phase epitaxy of GaN on Si(111) with a γ-Al2O3(111) epitaxial intermediate layer
J. Cryst. Growth, Vol.236, Issues 1-3, pp.21-25, Mar., 2002.
doi : 10.1016/S0022-0248(01)02090-5 - D. Satake, H. Ebi. N. Oku. K. Matsuda, H. Takao. M. Ashiki, M. Ishida
A sensor for blood cell counter using MEMS technology
Sens. Actuator B-Chem., Vol.83, Issue 1-3, pp.77-81, Mar., 2002.
doi : 10.1016/S0925-4005(01)01045-0 - N. Ohshima, S. Okamoto, K. Shibata, Y. Orihashi, S. Kageyama, M. Ishida, T. Yazawa, G. Camargo
Epitaxial Growth of GaN by Gas Source Molecular Beam Epitaxy Using NH3
Transactions of the Materials Research Society of Japan, Vol.27, No.2, pp.475-478, 2002. - A. Wakahara, N. Kawamura, H. Oishi, H. Okada, A. Yoshida, M. Ishida
Heteroepitaxial Growth of GaN on γ-Al2O3/Si Substrate by Organometallic Vapor Phase Epitaxy
Sens. Mater., Vol.14, No.5, pp.263-270, 2002.