論文 2004
- T. Okada, K. Sawada, M. Ishida, M. Shahjahan
Fabrication of metal-oxide-semiconductor field-effect transistors using crystalline γ-Al2O3 films as the gate dielectrics
Appl. Phys. Lett., Vol.85, No.21, pp.5004-5006, Nov., 2004.
doi : 10.1063/1.1826228 - Y. Kato, H. Takao, K. Sawada, M. Ishida
The Characteristic Improvement of Si (111) Matal-Oxide-Semiconductor Field-Effect Transistor by Long-Time Hydrogen Annealing
Jpn. J. Appl. Phys., Vol.43, No.10, pp.6848-6853, Oct., 2004.
doi : 10.1143/JJAP.43.6848 - D. Takamuro, H. Takao, K. Sawada, M. Ishida
Improvement of an infrared light sensitivity in PZT photosensitive field emitter
Sens. Actuator A-Phys., Vol.43, No.10, pp.6848-6853, Sep., 2004.
doi : 10.1016/j.sna.2003.11.017 - Y. Kato, T. Hashimoto, L. Y. Ching, H. Takao, K. Sawada, M. Ishida
Fabrication of JFET Device on Si (111) for Sensor Interface Array Circuit
IEICE Electron. Express, Vol.1, No.9, pp.243-247, Aug., 2004.
doi : 10.1587/elex.1.243 - M. Shahjahan, T. Okada, K. Sawada, M. Ishida
Effect of Annealing on Physical and Electrical Properties of Ultrathin Crystalline γ-Al2O3 High-κDielectric Deposited on Si Substrates
Jpn. J. Appl. Phys., Vol.43, No.8A, pp.5404-5408, Aug., 2004.
doi : 10.1143/JJAP.43.5404 - 石田誠, 高尾英邦
SOI技術を用いた高温環境用マイクロセンサシステム
表面技術, Vol. 55, No.1, pp.10-16, 2014.07.
doi : 10.4139/sfj.55.10 - H. Takao, F. Ina, T. Douzaka, K. Sawada, M. Ishida
SOI-CMOS Precision Front-End Amplifier for Wide Range and High Temperature (200℃) Operation of Smart Microsensors
Sens. Actuator A-Phys., Vol.112, Issue 2-3, pp.388-394, May, 2004.
doi : 10.1016/j.sna.2004.02.025 - D. Takamuro, H. Takao, K. Sawada, M. Ishida
Electron emission characteristic from a single crystalline ferroelectric material by an infrared light irradiation
J. Vac. Sci. Technol. B, Vol.22, Issue 3, pp.1396-1401, May, 2004.
doi : 10.1116/1.1738115 - J. S. Kim, T. Hoshi, K. Sawada, M. Ishida
Planar metal-insulator-semiconductor type field emitter fabricated on an epitaxial Al/Al2O3/Si(111) structure
J. Vac. Sci. Technol. B, Vol.22, Issue 3, pp.1358-1361, May, 2004.
doi : 10.1116/1.1738116 - T. Noda, H. Takao, M. Ashiki, H. Ebi, K. Sawada, M. Ishida
Characteristics of a High-Resolution Hemoglobin Measurement Microchip Integrated with Signal Processing Circuit
Jpn. J. Appl. Phys., Vol.43, No.4B, pp.2392-2396, Apr., 2004.
doi : 10.1143/JJAP.43.2392 - D. Akai, K. Hirabayashi, M. Yokawa, K. Sawada, M. Ishida
Epitaxial Growth of Pt(001) Thin Films on Si Substrates using an Epitaxial γ-Al2O3(001) Buffer Layer
J. Cryst. Growth, Vol.264, Issues 1-3, pp.463-467, Mar., 2004.
doi : 10.1016/j.jcrysgro.2003.12.048 - K. Sawada, T. Shimada, T. Ohshima, H. Takao, M. Ishida
Highly sensitive ion sensors using charge transfer technique
Sens. Actuator B-Chem., Vol.98, pp.69-72, Mar., 2004.
doi : 10.1016/j.snb.2003.09.027 - T. Kawano, Y. Kato, R. Tani, H. Takao, K. Sawada, M. Ishida
Selective Vapor-Liquid-Solid Epitaxial Growth of Micro-Si Probe Electrode Arrays with On-chip MOSFETs on Si (111) Substrates
IEEE Trans. Electron Devices, Vol.51, No.3, pp.415-420, Mar., 2004.
doi : 10.1109/TED.2003.822473 - 石田 誠, 河野剛士
マルチチャンネルマイクロプローブ電極アレイチップ
日本神経回路学会誌, Vol.11, No.3, 2004. - H. J. Chang, K. M. Suh, J. H Park, S. I. Shim, Y. T. Kim, M. Ishida
Preparation and Characterization of Filed Effect Transistor with (Bi,La)Ti3O12 Ferroelectric Gate Material
J. Korean Phys. Soc., Vol. 45, pp.S886-S889, 2004.