{"id":209,"date":"2010-05-04T18:28:50","date_gmt":"2010-05-04T09:28:50","guid":{"rendered":"http:\/\/int.ee.tut.ac.jp\/icg\/wp\/blog\/2010\/05\/04\/%e8%ab%96%e6%96%87-2002\/"},"modified":"2015-09-10T15:51:04","modified_gmt":"2015-09-10T06:51:04","slug":"%e8%ab%96%e6%96%87-2002","status":"publish","type":"post","link":"https:\/\/int.ee.tut.ac.jp\/icg\/wp\/?p=209","title":{"rendered":"\u8ad6\u6587 2002"},"content":{"rendered":"<ul>\n<p><!--No. 16--><\/p>\n<li>M. Shahjahan, N. Takahashi, K. Sawada, M. Ishida<br \/>\n<a href=\"http:\/\/jjap.jsap.jp\/link?JJAP\/41\/L1474\/\">Fabrication and Electrical Characterizaion of Ultrathin Crystalline Al2O3 Gate Dielectric Films on Si(100) and Si(111) by Molecular Beam Epitaxy<\/a><br \/>\nJpn. J. Appl. Phys., Vol.41, Part 2, No. 12B, pp.L1474-L1477, Dec., 2002.<br \/>\ndoi : 10.1143\/JJAP.41.L1474<\/li>\n<p><!--No. 15--><\/p>\n<li>H. Takao, M. Ishida, K. Sawada<br \/>\n<a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=1038835\">A Pneumatically Actuated Full In-Channel Microvalve with MOSFET-Like Function in Fluid Channel Networks<\/a><br \/>\nJ. Microelectromech. Syst., Vol.11, No. 5, pp.421-426, Oct., 2002.<br \/>\ndoi : 10.1109\/JMEMS.2002.803414<\/li>\n<p><!--No. 14--><\/p>\n<li>\u7530\u90e8\u9053\u6674, \u6fa4\u7530\u548c\u660e, \u30e9\u30c8\u30ce \u30cc\u30eb\u30e4\u30c7\u30a3, \u6749\u672c\u5e79\u751f, \u77f3\u5ddd\u9756\u5f66, \u77f3\u7530\u8aa0<br \/>\n\u30b7\u30ea\u30b3\u30f3\u30ca\u30ce\u69cb\u9020\u304b\u3089\u306e\u96fb\u5b50\u306e\u96fb\u754c\u653e\u51fa<br \/>\nIEICE Trans. Electron., Vol.J85-C, No.9, pp.803-809, Sep., 2002.<\/li>\n<p><!--No. 13--><\/p>\n<li>H. Takao, F. Ina, K. Sawada, M. Ishida<br \/>\nClock Feedthrough Reduction of CMOS Autozeroed Operational Amplifiers by Two-Stage Self-Compensation<br \/>\nIEICE Trans. Electron., Vol.E85-C, No. 7, pp.1499-1505, Jul., 2002.<\/li>\n<p><!--No. 12--><\/p>\n<li>K. Sawada M. Tabe, Y. Ishikawa, M. Ishida<br \/>\n<a href=\"http:\/\/scitation.aip.org\/content\/avs\/journal\/jvstb\/20\/3\/10.1116\/1.1467661\">Field Electron Emission Device Using Silicon Nano-Protrusions<\/a><br \/>\nJ. Vac. Sci. Technol. B, Vol.20, Issue 3, pp.787-790, May, 2002.<br \/>\ndoi : 10.1116\/1.1467661<\/li>\n<p><!--No. 11--><\/p>\n<li>M. Akiyama, M. Hanada, H. Takao, K. Sawada, M. Ishida<br \/>\n<a href=\"http:\/\/jjap.jsap.jp\/link?JJAP\/41\/2552\/\">Excess noise characterization of hydrogenated amorphous silicon p-I-n photo diode films<\/a><br \/>\nJpn. J. Appl. Phys., Vol.41, Part 1, No. 4B, pp.2552-2555, Apr., 2002.<br \/>\ndoi : 10.1143\/JJAP.41.2552<\/li>\n<p><!--No. 10--><\/p>\n<li>M. Shahjahan,Y. Koji, K. Sawand, M. Ishida<br \/>\n<a href=\"http:\/\/jjap.jsap.jp\/link?JJAP\/41\/2602\/\">Fabrication of resonance Tunnel diodes by \u03b3Al2O3\/Si  multiple Heterosutructute<\/a><br \/>\nJpn. J. Appl. Phys., Vol.41, Part 1, No. 4B, pp.2602-2605, Apr., 2002.<br \/>\ndoi : 10.1143\/JJAP.41.2602<\/li>\n<p><!--No. 9--><\/p>\n<li>K. Tomita, D. Takamuro, K. Sawada, M. Ishida<br \/>\n<a href=\"http:\/\/www.sciencedirect.com\/science\/article\/pii\/S0924424701008020?via=ihub\">Electron Emission Type Infrared Imaging Sensor Using Ferroelectric Thin Plate<\/a><br \/>\nSens. Actuator A-Phys., Vol.97-98, pp.147-152, Apr., 2002.<br \/>\ndoi : 10.1016\/S0924-4247(01)00802-0<\/li>\n<p><!--No. 8 \u8981\u78ba\u8a8d--><\/p>\n<li>S. Kawahito, K. Sawada, K. Tada, M. Ishida, Y. Tadokoro<br \/>\nA Chopperless Pyroelectric Active Pixel Infrared Image Sensor Using Chip Shift Operation<br \/>\nSens. Actuator A-Phys., Vol.97-98, pp.147-152, Apr., 2002.<\/li>\n<p><!--No. 7--><\/p>\n<li>S. Kawahito, K. Sawada, K. Tada, M. Ishida, Y. Tadokoro<br \/>\n<a href=\"http:\/\/www.sciencedirect.com\/science\/article\/pii\/S0924424702000249\">Active pixel circuits and signal processing techniques for a chopperless pyroelectric infrared image sensor<\/a><br \/>\nSens. Actuator A\uff0dPhys., Vol.97-98, pp.184-192, Apr., 2002.<br \/>\ndoi : 10.1016\/S0924-4247(02)00024-9<\/li>\n<p><!--No. 6--><\/p>\n<li>T. Kawano, Y. Kato, M. Futagawa, H. Takao. K. Sawada, M. Ishida<br \/>\n<a href=\"http:\/\/www.sciencedirect.com\/science\/article\/pii\/S0924424702000080\">Fabrication and Properties of Ultra Small Si Wire Arrays with Circuits by Vapor-Liquid-Solid Growth<\/a><br \/>\nSens. Actuator A\uff0dPhys., Vol.97-98, pp.709-715, April 2002.<br \/>\ndoi : 10.1016\/S0924-4247(02)00008-0<\/li>\n<p><!--No. 5--><\/p>\n<li>S. Kawahito, K. Sawada, K. Tada, M. Ishida, Y. Tadokoro<br \/>\n<a href=\"https:\/\/www.jstage.jst.go.jp\/article\/ieejsmas\/122\/3\/122_3_166\/_article\/-char\/ja\/\">An Improved Image Reconstruction Method for a Chopperless Pyroelectric Infrared Image Sensor<\/a><br \/>\nIEEJ Trans. Sens. Micromach., Vol.122, No.3, pp.166-171, Mar., 2002.<\/li>\n<p><!--No. 4--><\/p>\n<li>A. Wakahara, H. Oishi, H. Okada, A. Yoshida, Y. Koji, M. Ishida<br \/>\n<a href=\"http:\/\/www.sciencedirect.com\/science\/article\/pii\/S0022024801020905\">Organometallic vapor phase epitaxy of GaN on Si(111) with a \u03b3-Al2O3(111) epitaxial intermediate layer<\/a><br \/>\nJ. Cryst. Growth, Vol.236, Issues 1-3, pp.21-25, Mar., 2002.<br \/>\ndoi : 10.1016\/S0022-0248(01)02090-5<\/li>\n<p><!--No. 3--><\/p>\n<li>D. Satake, H. Ebi. N. Oku. K. Matsuda, H. Takao. M. Ashiki, M. Ishida<br \/>\n<a href=\"http:\/\/www.sciencedirect.com\/science\/article\/pii\/S0925400501010450\">A sensor for blood cell counter using MEMS technology<\/a><br \/>\nSens. Actuator B-Chem., Vol.83, Issue 1-3, pp.77-81, Mar., 2002.<br \/>\ndoi : 10.1016\/S0925-4005(01)01045-0<\/li>\n<p><!--No. 2--><\/p>\n<li>N. Ohshima, S. Okamoto, K. Shibata, Y. Orihashi, S. Kageyama, M. Ishida, T. Yazawa, G. Camargo<br \/>\nEpitaxial Growth of GaN by Gas Source Molecular Beam Epitaxy Using NH3<br \/>\nTransactions of the Materials Research Society of Japan, Vol.27, No.2, pp.475-478, 2002.<\/li>\n<p><!--No. 1--><\/p>\n<li>A. Wakahara, N. Kawamura, H. Oishi, H. Okada, A. Yoshida, M. Ishida<br \/>\n<a href=\"http:\/\/myukk.org\/Archives-11-20.html\">Heteroepitaxial Growth of GaN on \u03b3-Al2O3\/Si Substrate by Organometallic Vapor Phase Epitaxy<\/a><br \/>\nSens. Mater., Vol.14, No.5, pp.263-270, 2002.<\/li>\n<\/ul>\n","protected":false},"excerpt":{"rendered":"<p>M. Shahjahan, N. Takahashi, K. Sawada, M. Ishida Fabrication and Electrical Characterizaion of Ultrathin Cryst [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":[],"categories":[26],"tags":[],"_links":{"self":[{"href":"https:\/\/int.ee.tut.ac.jp\/icg\/wp\/index.php?rest_route=\/wp\/v2\/posts\/209"}],"collection":[{"href":"https:\/\/int.ee.tut.ac.jp\/icg\/wp\/index.php?rest_route=\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/int.ee.tut.ac.jp\/icg\/wp\/index.php?rest_route=\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/int.ee.tut.ac.jp\/icg\/wp\/index.php?rest_route=\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/int.ee.tut.ac.jp\/icg\/wp\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=209"}],"version-history":[{"count":6,"href":"https:\/\/int.ee.tut.ac.jp\/icg\/wp\/index.php?rest_route=\/wp\/v2\/posts\/209\/revisions"}],"predecessor-version":[{"id":2906,"href":"https:\/\/int.ee.tut.ac.jp\/icg\/wp\/index.php?rest_route=\/wp\/v2\/posts\/209\/revisions\/2906"}],"wp:attachment":[{"href":"https:\/\/int.ee.tut.ac.jp\/icg\/wp\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=209"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/int.ee.tut.ac.jp\/icg\/wp\/index.php?rest_route=%2Fwp%2Fv2%2Fcategories&post=209"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/int.ee.tut.ac.jp\/icg\/wp\/index.php?rest_route=%2Fwp%2Fv2%2Ftags&post=209"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}