{"id":197,"date":"2010-05-04T18:24:54","date_gmt":"2010-05-04T09:24:54","guid":{"rendered":"http:\/\/int.ee.tut.ac.jp\/icg\/wp\/?p=197"},"modified":"2015-09-10T15:33:34","modified_gmt":"2015-09-10T06:33:34","slug":"%e8%ab%96%e6%96%87-2004","status":"publish","type":"post","link":"https:\/\/int.ee.tut.ac.jp\/icg\/wp\/?p=197","title":{"rendered":"\u8ad6\u6587 2004"},"content":{"rendered":"<ul>\n<p><!--No. 15--><\/p>\n<li>T. Okada, K. Sawada, M. Ishida, M. Shahjahan<br \/>\n<a href=\"http:\/\/scitation.aip.org\/content\/aip\/journal\/apl\/85\/21\/10.1063\/1.1826228\">Fabrication of metal-oxide-semiconductor field-effect transistors using crystalline \u03b3-Al2O3 films as the gate dielectrics<\/a><br \/>\nAppl. Phys. Lett., Vol.85, No.21, pp.5004-5006, Nov., 2004.<br \/>\ndoi : 10.1063\/1.1826228<\/li>\n<p><!--No. 14--><\/p>\n<li>Y. Kato, H. Takao, K. Sawada, M. Ishida<br \/>\n<a href=\"http:\/\/jjap.jsap.jp\/link?JJAP\/43\/6848\/\">The Characteristic Improvement of Si (111) Matal-Oxide-Semiconductor Field-Effect Transistor by Long-Time Hydrogen Annealing<\/a><br \/>\nJpn. J. Appl. Phys., Vol.43, No.10, pp.6848-6853, Oct., 2004.<br \/>\ndoi : 10.1143\/JJAP.43.6848<\/li>\n<p><!--No. 13&gt;--><\/p>\n<li>D. Takamuro, H. Takao, K. Sawada, M. Ishida<br \/>\n<a href=\"http:\/\/www.sciencedirect.com\/science\/article\/pii\/S0924424703006484?via=ihub\">Improvement of an infrared light sensitivity in PZT photosensitive field emitter<\/a><br \/>\nSens. Actuator A-Phys., Vol.43, No.10, pp.6848-6853, Sep., 2004.<br \/>\ndoi : 10.1016\/j.sna.2003.11.017<\/li>\n<p><!--No. 12--><\/p>\n<li>Y. Kato, T. Hashimoto, L. Y. Ching, H. Takao, K. Sawada, M. Ishida<br \/>\n<a href=\"https:\/\/www.jstage.jst.go.jp\/article\/elex\/1\/9\/1_9_243\/_article\">Fabrication of JFET Device on Si (111) for Sensor Interface Array Circuit<\/a><br \/>\nIEICE Electron. Express, Vol.1, No.9, pp.243-247, Aug., 2004.<br \/>\ndoi : 10.1587\/elex.1.243<\/li>\n<p><!--No. 11--><\/p>\n<li>M. Shahjahan, T. Okada, K. Sawada, M. Ishida<br \/>\n<a href=\"http:\/\/jjap.jsap.jp\/link?JJAP\/43\/5404\/\">Effect of Annealing on Physical and Electrical Properties of Ultrathin Crystalline \u03b3-Al2O3 High-\u03baDielectric Deposited on Si Substrates<\/a><br \/>\nJpn. J. Appl. Phys., Vol.43, No.8A, pp.5404-5408, Aug., 2004.<br \/>\ndoi : 10.1143\/JJAP.43.5404<\/li>\n<p><!--No. 10--><\/p>\n<li>\u77f3\u7530\u8aa0, \u9ad8\u5c3e\u82f1\u90a6<br \/>\n<a href=\"https:\/\/www.jstage.jst.go.jp\/article\/sfj\/55\/1\/55_1_10\/_article\/-char\/ja\/\">SOI\u6280\u8853\u3092\u7528\u3044\u305f\u9ad8\u6e29\u74b0\u5883\u7528\u30de\u30a4\u30af\u30ed\u30bb\u30f3\u30b5\u30b7\u30b9\u30c6\u30e0<\/a><br \/>\n\u8868\u9762\u6280\u8853, Vol. 55, No.1, pp.10-16, 2014.07.<br \/>\ndoi : 10.4139\/sfj.55.10<\/li>\n<p><!--No. 9--><\/p>\n<li>H. Takao, F. Ina, T. Douzaka, K. Sawada, M. Ishida<br \/>\n<a href=\"http:\/\/www.sciencedirect.com\/science\/article\/pii\/S0924424704001414?via=ihub\">SOI-CMOS Precision Front-End Amplifier for Wide Range and High  Temperature (200\u2103) Operation of Smart Microsensors<\/a><br \/>\n Sens. Actuator A-Phys., Vol.112, Issue 2-3, pp.388-394, May, 2004.<br \/>\ndoi : 10.1016\/j.sna.2004.02.025<\/li>\n<p><!--No. 8--><\/p>\n<li>D. Takamuro, H. Takao, K. Sawada, M. Ishida<br \/>\n<a href=\"http:\/\/scitation.aip.org\/content\/avs\/journal\/jvstb\/22\/3\/10.1116\/1.1738115\">Electron emission characteristic from a single crystalline ferroelectric material by an infrared light irradiation<\/a><br \/>\n J. Vac. Sci. Technol. B, Vol.22,  Issue 3, pp.1396-1401, May, 2004.<br \/>\ndoi : 10.1116\/1.1738115<\/li>\n<p><!--No. 7--><\/p>\n<li>J. S. Kim, T. Hoshi, K. Sawada, M. Ishida<br \/>\n<a href=\"http:\/\/scitation.aip.org\/content\/avs\/journal\/jvstb\/22\/3\/10.1116\/1.1738116\">Planar metal-insulator-semiconductor type field emitter fabricated on an epitaxial Al\/Al2O3\/Si(111) structure<\/a><br \/>\nJ. Vac. Sci. Technol. B, Vol.22, Issue 3, pp.1358-1361, May, 2004.<br \/>\ndoi : 10.1116\/1.1738116<\/li>\n<p><!--No. 6--><\/p>\n<li>T. Noda, H. Takao, M. Ashiki, H. Ebi, K. Sawada, M. Ishida<br \/>\n<a href=\"http:\/\/jjap.jsap.jp\/link?JJAP\/43\/2392\/\">Characteristics of a High-Resolution Hemoglobin Measurement Microchip Integrated with Signal Processing Circuit<\/a><br \/>\nJpn. J. Appl. Phys., Vol.43, No.4B, pp.2392-2396, Apr., 2004.<br \/>\ndoi : 10.1143\/JJAP.43.2392<\/li>\n<p><!--No. 5--><\/p>\n<li>D. Akai, K. Hirabayashi, M. Yokawa, K. Sawada, M. Ishida<br \/>\n<a href=\"http:\/\/www.sciencedirect.com\/science\/article\/pii\/S0022024803022590?via=ihub\">Epitaxial Growth of Pt(001) Thin Films on Si Substrates using an Epitaxial \u03b3-Al2O3(001) Buffer Layer<\/a><br \/>\nJ. Cryst. Growth, Vol.264, Issues 1-3, pp.463-467, Mar., 2004.<br \/>\ndoi : 10.1016\/j.jcrysgro.2003.12.048<\/li>\n<p><!--No. 4--><\/p>\n<li>K. Sawada, T. Shimada, T. Ohshima, H. Takao, M. Ishida<br \/>\n<a href=\"http:\/\/www.sciencedirect.com\/science\/article\/pii\/S0925400503007469?via=ihub\">Highly sensitive ion sensors using charge transfer technique<\/a><br \/>\nSens. Actuator B-Chem., Vol.98, pp.69-72, Mar., 2004.<br \/>\ndoi : 10.1016\/j.snb.2003.09.027<\/li>\n<p><!--No. 3--><\/p>\n<li>T. Kawano, Y. Kato, R. Tani, H. Takao, K. Sawada, M. Ishida<br \/>\n<a href=\"http:\/\/ieeexplore.ieee.org\/xpl\/articleDetails.jsp?arnumber=1268267\">Selective Vapor-Liquid-Solid Epitaxial Growth of Micro-Si Probe Electrode Arrays with On-chip MOSFETs on Si (111) Substrates<\/a><br \/>\nIEEE Trans. Electron Devices, Vol.51, No.3, pp.415-420, Mar., 2004.<br \/>\ndoi : 10.1109\/TED.2003.822473 <\/li>\n<p><!--No. 2--><\/p>\n<li>\u77f3\u7530 \u8aa0, \u6cb3\u91ce\u525b\u58eb<br \/>\n\u30de\u30eb\u30c1\u30c1\u30e3\u30f3\u30cd\u30eb\u30de\u30a4\u30af\u30ed\u30d7\u30ed\u30fc\u30d6\u96fb\u6975\u30a2\u30ec\u30a4\u30c1\u30c3\u30d7<br \/>\n\u65e5\u672c\u795e\u7d4c\u56de\u8def\u5b66\u4f1a\u8a8c, Vol.11, No.3, 2004.<\/li>\n<p><!--No. 1--><\/p>\n<li>H. J. Chang, K. M. Suh, J. H Park, S. I. Shim, Y. T. Kim, M. Ishida<br \/>\nPreparation and Characterization of Filed Effect Transistor with (Bi,La)Ti3O12 Ferroelectric Gate Material<br \/>\nJ. Korean Phys. Soc., Vol. 45, pp.S886-S889, 2004.<\/li>\n<\/ul>\n","protected":false},"excerpt":{"rendered":"<p>T. Okada, K. Sawada, M. Ishida, M. Shahjahan Fabrication of metal-oxide-semiconductor field-effect transistors [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":[],"categories":[26],"tags":[],"_links":{"self":[{"href":"https:\/\/int.ee.tut.ac.jp\/icg\/wp\/index.php?rest_route=\/wp\/v2\/posts\/197"}],"collection":[{"href":"https:\/\/int.ee.tut.ac.jp\/icg\/wp\/index.php?rest_route=\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/int.ee.tut.ac.jp\/icg\/wp\/index.php?rest_route=\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/int.ee.tut.ac.jp\/icg\/wp\/index.php?rest_route=\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/int.ee.tut.ac.jp\/icg\/wp\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=197"}],"version-history":[{"count":6,"href":"https:\/\/int.ee.tut.ac.jp\/icg\/wp\/index.php?rest_route=\/wp\/v2\/posts\/197\/revisions"}],"predecessor-version":[{"id":2903,"href":"https:\/\/int.ee.tut.ac.jp\/icg\/wp\/index.php?rest_route=\/wp\/v2\/posts\/197\/revisions\/2903"}],"wp:attachment":[{"href":"https:\/\/int.ee.tut.ac.jp\/icg\/wp\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=197"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/int.ee.tut.ac.jp\/icg\/wp\/index.php?rest_route=%2Fwp%2Fv2%2Fcategories&post=197"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/int.ee.tut.ac.jp\/icg\/wp\/index.php?rest_route=%2Fwp%2Fv2%2Ftags&post=197"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}