国際会議

■2021年

  • H. Sekiguchi, H. Yasunaga, A. Nishikawa, M. Ohsawa, Development of MicroLED Neural Probe for Optogenetics, Materials Science and Advanced Electronics Created by SIngularity, February 1st-3rd, 2021.

■2019年

  • H. Sekiguchi, H. Yasunaga, K. Tsuchiyama, K. Yamane, H. Okada, A. Wakahara, Monolithic Integration of GaN-micro-LED and Si-MOSFET for Bio-application, The 26th International Display Workshops, FMC4/LCT4-3, Sapporo, Japan, November 27th-29th, 2019. Invited
  • H. Yasunaga, M. Ohsawa, and H. Sekiguchi, Fabrication of Needle-Shaped GaN-μLED Neural Probe for Optogenetics, The 9th Asia-Pacific Workshop on Widegap Semiconductors, OD4-3, Okinawa, Japan, November 10th-15th, 2019.
  • H. Sekiguchi1, M. Sakai and A. Wakahara, Possibility of Single Optical Site of Eu and Mg Codoped GaN, 13th International Conference on Nitride Semiconductors, IP02.16, Bellevue, Washington, July 7th-12th, 2019
  • H. Sekiguchi, K. Miwa, K. Yamane, A. Wakahara, H. Okada, GaN-based Inverter by Monolithic Integration of Threshold Controlled MOSFETs, Coumpound Semiconductor Week 2019, MoP-G-10, Kasugano International Forum, Nara, Japan, May 19th-23rd, 2019.
  • H. Sekiguchi, H. Yasunaga, K. Yamane, A. Wakahara, Fabrication of neural optical probe using GaN-based blue mLED, The 7th International Conference on Light-Emitting Devices and Their Industrial Applications, Pacifico Yokohama, Kanagawa, Japan, April 24th, 2019. Invited
  • H. Sekiguchi, A. Sukegawa, K. Yamane, H. Okada, K. Kishino, and A. Wakahara, Growth of Eu doped GaN nanocolumns by rf-plasma-assisted molecular beam epitaxy, UK Nitride Consortium, Strathclyde, United Kingdom, January 9th-10th, 2019.

■2018年

  • H. Yasunaga, H. Sekiguchi, Development of integrated blue mLED neural probes for optogenetic stimulation in the depth direction, Interanationla Workshop on Nitride Semiconductors 2018, OD2-7, Kanazawa, Japan, November 11th-16th, 2018.
  • A. Sukegawa, H. Sekiguchi, Y. Tamai, S. Fujiwara, K. Yamane, H. Okada, K. Kishino, and A. Wakahara, RF-MBE growth of regularly arranged Europium doped GaN nanocolumns on AlN/Si template for single photon emitter, Interanationla Workshop on Nitride Semiconductors 2018, GR6-2, Kanazawa, Japan, November 11th-16th, 2018.
  • H. Sekiguchi, Y. Higashi, K. Yamane, H. Okada, A. Wakahara, K. Kishino, Effect of column diameter and height on optical properties of regularly arranged GaN nanocolumn grown by rf-MBE, 34th North American Molecular Beam Epitaxy Conference, MBE-MoP13, Banff, Albelta, Canada, September 30-October 5, 2018.
  • H. Sekiguchi, K. Yamane, H. Okada, K. Kishino, and A. Wakahara, Fabrication of regularly arranged InGaN:Eu/GaN quantum wells by rf-plasma-assisted molecular beam epitaxy, 20th International Conference on Molecular Beam Epitaxy, Th-B4-2, Shanghai, China, September 2-7, 2018.
  • H. Sekiguchi, R. Matsuzaki, A. Sukegawa, K. Yamane, H. Okada, K. Kishino, and A. Wakahara, Eu doped GaN nanocolumn light-emitting diodes exhibiting high emission-wavelength stability, The 45th International Symposium on coupound semiconductors, Th2B6-2, Massachusetts Institute of Technology, USA, May 29th – June 1st, 2018.

■2017年

  • H. Okada, H. Sekiguchi, K. Yamane, A. Wakahara, Fabrication of GaN-based Depletion Type n-channel MOSFET Using Si Ion-implantation Technique Towards Integrated Circuit, 12th Topical Wirkshop on Heterostructure Microelectronics, 3-4, Hotel Kyocera, Kirishima, Kyushuu, Japan, August 28-31, 2017. Poster
  • H. Sekiguchi, S. Kamizuki, K. Tsuchiyama, K. Yamane, H. Okada, A. Wakahara, Si channeled implantation in GaN and its device application, 9th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, 03aC02O, Chubu University, Aichi, Japan, March 1-5th, 2017.

■2016年

  • A. Wakahara, H. Sekiguchi, M. Sakai, Stable luminous Eu site with high excitation efficiency in NH3-MBE grown GaN co-doped with Mg, 2016 Material Research Society (MRS) fall meeting, EM2.9.04, Boston, USA, Nov. 27-Dec. 2, 2016.
  • K. Sato, K. Yamane, M. Goto, K. Takahashi, H. Sekiguchi, H. Okada, A. Wakahara, Doping control of GaAsPN grown by molecular beam epitaxy toward monolithic III-V/Si tandem solar cells, European Materials Research Society 2016 Fall Meeting, Warsaw University of Technology, Warsaw, Poland, Sep. 19-22th, 2016.
  • K. Tsuchiyama, K. Yamane, S. Utsunomiya, S. Nakagawa, Y. Tachihara, H. Sekiguchi, H. Okada and A. Wakahara, Monolithic integration of Si-MOSFETs and GaN-µLEDs using Si/SiO2/GaN-LED structure, European Materials Research Society 2016 Fall Meeting , Warsaw University of Technology, Warsaw, Poland, Sep. 19-22th, 2016.
  • H. Sekiguchi, H. Tateishi, T. Imanishi, K. Yamane, H. Okada, K. Kishino, A. Wakahara, Growth of Eu doped GaN thin film and nanocolumns grown by molecular beam epitaxy, Energy Materials Nanotechnology meeting on Epitaxy, A11, Budapest, Hungary, Sep. 4-8, 2016.
  • K. Boualiong, K. Yamane, M. Moriyama, H. Sekiguchi, H. Okada, A. Wakahara, Metalorganic vapor phase epitaxy growth of GaPN alloys assisted by surface nitridation with ammonia, 43rd International Symposium on Compound Semiconductors, Toyama International Conference Center, Toyama, Japan, June. 26-30, 2016.
  • T. Imanishi, H. Sekiguchi, K. Ozaki, K. Yamane, H. Okada, K. Kishino, A. Wakahara, Eu concentration dependence of Eu doped GaN nanocolumns grown by RF-plasma-assisted molecular beam epitaxy, the 43rd Int. Symp. On Compound Semiconductors, Toyama, Japan, Jul. 26-30, 2016.

■2015年

  • K. Date, H. Sekiguchi, A. Yanagihara, K. Yamane, A. Wakahara, K. Kishino, Evaluation of surface diffusion lengths of Ga adatom on m-and c-plane GaN during MBE growth, The 6th International Symposium on Growth of III-Nitrides, LN-Tu-1, Act City Hamamatsu, Hamamatsu, Japan, Nov.8-13, 2015. Poster
  • K. Tsuchiyama, K. Yamane, H. Sekiguchi, H. Okada, A. Wakahara, Fabrication of Si/SiO2/GaN-LED wafer using surface activated bonding, The 6th International Symposium on Growth of III-Nitrides, We-B6, Act City Hamamatsu, Hamamatsu, Japan, Nov.8-13, 2015. Poster
  • S. Nishikawa, H. Sekiguchi, T. Imanishi, K. Yamane, H. Okada, K. Kishino, A. Wakahara, Growth of Eu doped GaN nanocolumns grown by rf-plasama-assisted molecular beam epitaxy, The 6th International Symposium on Growth of III-Nitrides, Tu-B24, Act City Hamamatsu, Hamamatsu, Japan, Nov. 8-13, 2015. Poster
  • H. Tahara, H. Sekiguchi, K. Yamane, H. Okada, A. Wakahara, Eu incorporation mechanism of Eu doped GaN grown by rf-plasma-assisted molecular-beam epitaxy, The 6th International Symposium on Growth of III-Nitrides, Tu-B25, Act City Hamamatsu, Hamamatsu, Japan, Nov. 8-13,2015. Poster
  • O. Barry, H. Sekiguchi, K. Yamane, H. Okada, A. Wakahara, H. Miyake, M. Hiramatsu, Solar-Blind Ultraviolet Detector Based on Al0.49Ga0.51N/AlN Heterostructure Back-Illuminated Schottky Barrier Diode, 7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, Nagoya University, Aichi, Japan, March 26-31, 2015.
  • H. Sekiguchi, M. Kanemoto, K. Yamane, H. Okada, and A. Wakahara, Sharp red light-emitting diodes using optical site selected Eu doped GaN active layer, Materials Challenges in Alternative & Renewable Energy, SO10-7, p.136, Jeju, Korea, February 24-27, 2015. Invited

■2014年

  • H. Oktavianto, K. Yamane, H. Sekiguchi, A. Wakahara, High Speed Motion Detector by Image Processing Circuit based-on OEIC and FPGA, International Conference of Global Network for Innovative Technology, Penang, Malaysia, December 14-15, 2014.
  • H. Okada, K. Kawakami, T. Shinohara, T. Ishimaru, H. Sekiguchi, A. Wakahara, and M. Furukawa, Chemical Vapor Deposition of Silicon Nitride Films Enhanced by Surface-Wave Plasma for GaN Devices, The Irago Conference 2014, Tsukuba, Japan, November 6-7, 2014.
  • K. Yamano, T. Oto, H. Sekiguchi, A. Wakahara, Y. Kawakami, K. Kishino, Regularly arranged AlGaN nanocolumn growth on nanocolumn templates, WeB2-4, 18th International Conference on Molecular Beam Epitaxy, Flagstaff, Arizona, USA, September 7-12, 2014.
  • N. Urakami, H. Sekiguchi, H. Okada, A. Wakahara, Growth of dilute nitride by embedding nitride layer and its application to GaAs(P)N quantum well structure, P9, 18th International Conference on Molecular Beam Epitaxy, Flagstaff, Arizona, USA, September 7-12, 2014.
  • H. Sekiguchi, R. Matsumura, M. Kanemoto, T. Kamada, M. Sakai, A. Syouji, A. Wakahara, Optical site control of Eu doped GaN by Mg codoping, P86, 18th International Conference on Molecular Beam Epitaxy, Flagstaff, Arizona, USA, September 7-12, 2014.
  • A. Wakahara, N. Urakami, H. Sekiguchi, K. Yamane, III-V-N/Si heteroepitaxy for multijunction solar cells, 40th IEEE Photovoltaic Specialist Conference, #778, Colorado Convention Center, Denver, USA, Jun. 8-13, 2014.
  • A. Takada, S. Ochi, H. Sekiguchi, H. Okada, A. Wakahara, GaN-based UV sensor array for integration with Si sensing circuit, 6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, 06aP54, Meijo University, Aichi, Japan, March 6-8th, 2014.
  • K. Tsuchiyama, H. Tahara, H. Sekiguchi, H. Okada, A. Wakhara,  Evaluation of optical property in various InGaN micro-LED size (l=470 nm), 6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, 05aC04, Meijo University, Aichi, Japan, March 6-8th, 2014.
  • R. Matsumura, H. Sekiguchi, H. Okada, A. Wakahara, Eu concentration dependence of optical properties for Eu and Mg codoped GaN, 6th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, 04aC03, Meijo University, Aichi, Japan, March 6-8th, 2014.

■2013年

  • M. Kanemoto, H. Sekiguchi, Y. Takagi, H. Okada, A.Wakahara, Effect of Mg codoping on optical characteristics in Eu doped AlGaN, JSAP-MRS Joint Symposia, 19a-M5-7, Doshisha Univeristy, Kyoto, Japan, September 16-20, 2013.
  • A. Wakahara, N. Urakami, H. Ito, H. Okada, and H. Sekiguchi, III-N-based optoelectronic devices and their integration, 10th Topical Workshop on Heterostructure Microelectronics, 13-2, Hakodate Kokusai Hotel, Hakodate, Japan, September 2-5, 2013. Invited
  • H. Okada, Y. Okada, H. Sekiguchi, A. Wakahara, S. Sato, T. Oshima, Proton irradiation effects on electrical and luminescence properties of GaN-based light emitting device, 10th Topical Workshop on Heterostructure Microelectronics, 3-8, Hakodate Kokusai Hotel, Hakodate, Japan, September 2-5, 2013.
  • H. Sekiguchi, R. Matsumura, T. Otani, Y. Takagi, H. Okada, A. Wakahara, Fabrication of low-temperature-dependent light-emitting diodes using Eu and Eu and Mg codoped GaN, 10th International Conference on Nitride Semiconductors 2013, BP1.37, Washington, DC, USA, August 25-30, 2013.
  • N. Urakami, H. Ito, H. Sekiguchi, H. Okada, and A. Wakahara, Growth and multiple stacking of self-assembled InGaAsN/GaP quantum dot by molecular beam epitaxy, 17th International Conference on Crystal Growth and Epitaxy, Warsaw, Poland, August 11-16, 2013.
  • H. Okada, Y. Okada, H. Sekiguchi, A. Wakahara, S. Sato, and Takeshi Ohshima, Proton irradiation effects on p- and n-type GaN, 2013 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, 2B-2, Seoul, Korea, June 26-28, 2013.
  • N. Urakami, H. Ito, H. Sekiguchi, H. Okada, A. Wakahara, Growth of GaAsN quantum well structure by surface nitridation, the 40th Int. Symp. On Compound Semiconductors, MoB3.4, Kobe, Japan, May 19-23, 2013.
  • M. Kumar, H. Sekiguchi, H. Okada, A. Wakahara, AlGaN/GaN Schottky barrier photodetector on Si with high detection limit, 5th Int. Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, January 28-Febrary 1, 2013.
  • Y. Kumazawa, H. Takahashi, H. Okada, A. Sandhu, A. Wakahara, and H. Sekiguchi, Study of Transfer Method of Graphene Formed by Chemical Vapor Deposition Using Dicing Tape,The Irago Conference, 15P-21, Irago, Aichi, Japan, November 11-15, 2013.