学術論文

■2021年

  • H. Yasunaga, T.Takagi, D. Shinko, Y. Nakayama, Y. Takeuchi, A. Nishikawa, A. Loesing, M. Ohsawa and H. Sekiguchi,“Development of a neural probe integrated with high-efficiency MicroLEDs for in vivo application“,Japanese Journal of Applied Physics,60,016503 (2021)
    https://doi.org/10.35848/1347-4065/abcffa

■2020年

  •  H. Okada, K. Miwa, T. Yokoyama, K. Yamane, A. Wakahara, H. Sekiguchi, “GaN-Based Monolithic Inverter Consiting of Enhancement- and Depletion-Mode MOSFETs by Si ion”, Phys. Stat. Sol. A 1900550-1-8 (2020).
    https://doi.org/10.1002/pssa.201900550

■2019年

  •  H.Sekiguchi, H. Yasunaga, K. Tsuchiyama, R. Nitta, “Neural optical probe with monolithically integrated intensity-monitoring mLED and polymer waveguide for optogenetics”, Electronics Letters, 55, 619 (2019).
    https://doi.org/10.1049/el.2019.0300
  •  H.Sekiguchi, M. Sakai, T. Kamada, K. Yamane, H. Okada, and A. Wakahara, “Observation of single optical site of Eu and Mg codoped GaN grown by NH3-source molecular beam epitaxy”, J. Appl. Phys. 125, 175702 (2019).
     https://doi.org/10.1063/1.5090893
  •  H. Sekiguchi, Y. Higashi, K. Yamane, A. Wakahara, H. Okada, and K. Kishino, “Fabrication and optical properties of regularly arranged GaN-based nanocolumns on Si substrate”, J. Vac. Sci. Tech. B, 37, 031207 (2019).
    https://doi.org/10.1116/1.5088160
  •  J. A. Piedra-Lorenzana, K. Yamane, K. Shiota, J. Fujimoto, S. Tanaka, H. Sekiguchi, H. Okada, A. Wakahara, “Estimation of Ga adatom diffusion length for GaP growth by molecular beam epitaxy”, J.Cryst. Growth, 512, 37-40 (2019).
    https://doi.org/10.1016/j.jcrysgro.2019.02.008
  •  H. Sekiguchi, K. Date, T. I manishi, H. Tateishi, K. Yamane, H. Okada, K. Kishino, A. Wakahara, “Regularly arranged Eu-doped GaN nanocolumns grown by RF-plasma-assisted molecular beam epitaxy through Ti-mask selective-area growth technique”, J. Cryst. Growth, 511, 73-78 (2019).
    https://doi.org/10.1016/j.jcrysgro.2019.01.032
  •  A. Sukegawa, H. Sekiguchi, R. Matsumura, K. Yamane, H. Okada, K. Kishino, and A. Wakahara, “Self-organized Eu doped GaN nanocolumn light-emitting diode grown by RF-molecular-beam epitaxy”, Phys. Stat. Sol. A, 216, 1800501 (2019).
    https://doi.org/10.1002/pssa.201800501

■2018年

  •  K. Yamane, S. Mugikura, S. Tanaka, H. Sekiguchi, H. Okada, A. Wakahara, “Impact of temperature and nitrogen composition on the growth of GaAsPN alloys”, J. Cryst. Growth, 486, 24-29 (2018).
    https://doi.org/10.1016/j.jcrysgro.2018.01.006

■2017年

  •  K. Yamane, K. Sato, H. Sekiguchi, H. Okada, A. Wakahara, “Doping control of SaAsPN alloys by molecular beam epitaxy for monolithic II-V/Si tandem solar cells”, J. Cryst. Growth, 473, 55-59 (2017).
    https://doi.org/10.1016/j.jcrysgro.2017.05.025
  •  K. Yamane, M. Goto, K. Takahashi, H. Sekiguchi, H. Okada, A. Wakahara, “Growth of a lattice-matched GaAsPN P-I-N junction on a Si substrate for monolithic III-V/Si tandem solar cells”, Appl. Phys. Express, 10, 075504 (2017).
    https://doi.org/10.7567/apex.10.075504
  •  K. Yamane, M. Moriyama, K. Boualiong, H. Sekiguchi, H. Okada, A. Wakahara, “Metal-organic vapor phase epitaxy of GaPN alloys via surface nitridation using ammonia”, Phys. Stat. Sol. (B), 254, 1600483 (2017).
    https://doi.org/10.1002/pssb.201600483
  •  H. Okada, M. Baba, M. Furukawa, K. Yamane, H. Sekiguchi, A. Wakahara, “Formation of SiO2 film by chemical capor deposition enhaced by atomic species extracted from a surface-wave generated plasma”, AIP Conference Proceedings, 1807, 020006 (2017)
    https://doi.org/10.1063/1.4974788
  •  H. Oktavianto, K. Yamane, H. Sekiguchi, T. Hizawa, A. Wakahara, “Hydrogen flame with bioinspired optoelectronic integrated circuit and field-programmable gate array using integrated three-dimensional system architecture”, Sens. Mater., 29, 587-600 (2017).
    https://doi.org/10.18494/sam.2017.1569
  •  H. Sekiguchi, T. Imanishi, R. Matsuzaki, K. Ozaki, K. Yamane, H. Okada, K. Kishino, A. Wakahara, “Stable-wavelength operation of europium-doped GaN nanocolumn light-emitting diodes grown by rf-plasma-assisted molecular beam epitaxy”, Electron. Lett. 53, 666-668 (2017).
    https://doi.org/10.1049/el.2017.0447

■2016年

  •  H. Sekiguchi, M. Sakai, T. Kamada, H. Tateishi, A. Syouji and A. Wakahara, “Optical sites in Eu- and Mg-codoped GaN grown by NH3-source molecular beam epitaxy”, Appl. Phys. Lett. 109, 151106 (2016).
    https://doi.org/10.1063/1.4964519
  •  K. Tsuchiyama, K. Yamane, S. Utsunomiya, H. Sekiguchi, H. Okada, A. Wakahara, “Monolithic integration of Si-MOSFET and GaN-LED using Si/SiO2/GaN-LED wafer”, Appl. Phys. Express, 9, 104101 (2016).
    https://doi.org/10.7567/apex.9.104101
  •  H. Sekiguchi, S. Nishikawa, T. Imanishi, K. Ozaki, K. Yamane, H. Okada, K. Kishino, A. Wakahara, “Structural and optical properties of Eu-doped GaN nanocolumns on (111) Si substrates grown by RF-plasma-assisted molecular beam epitaxy”, Japanese Journal of Applied Physics, 55, 05FG07 (2016).
    https://doi.org/10.7567/jjap.55.05fg07
  •  K. Tsuchiyama, K. Yamane, H. Sekiguchi, H. Okada, A. Wakahara, “Fabrication of Si/SiO2/GaN structure by surface-activated bonding for monolithic integration of optoelectronic devices”, Japanese Journal of Applied Physics, 55, 05FL01 (2016).
    https://doi.org/10.7567/jjap.55.05fl01
  •  H. Okada, M. Shinohara, Y. Kondo, H. Sekiguchi, K. Yamane, A. Wakahara, “Investigation of HCl-based surface treatment for GaN devices”, AIP Conference Proceedings, 1709, 020011 (2016).
    https://doi.org/10.1063/1.4941210
  •  N. Urakami, K. Yamane, H. Sekiguchi, H. Okada, A. Wakahara, “Molecular-beam epitaxy growth of dilute GaAsN allys by surface nitridation”, Journal of Crystal Growth, 435, 19 (2016) .
    https://doi.org/10.1016/j.jcrysgro.2015.11.011

■2015年

  •  K.Yamano, K.Kishino, H.Sekiguchi, T.Oto, A.Wakahara, Y.Kawakami, “Novel selective area growth method for regularly arranged AlGaN nanocolumns using nanotemplates”, Journal of Crystal Growth, 425, 316 (2015) .
    https://doi.org/10.1016/j.jcrysgro.2015.02.051
  •  H. Oktavianto, K. Yamane, H. Sekiguchi, A. Wakahara, “Solar-blind focal plane array photodetectors for massive parallel processing application based on optoelectronic integrated circuit and field-programmable gate array”, Sensor. Mater. 27 1009 (2015).
    https://doi.org/10.18494/sam.2015.1138

■2014年

  •  K.Yamane, N.Urakami, H.Sekiguchi, A.Wakahara, “III-V-N compounds for multi-junction solar cells on Si”, IEEE Photovoltaic Specialist Conference, 2972 (2014) .
    https://doi.org/10.1109/pvsc.2014.6925509
  •  H.Okada, Y.Okada, H.Sekiguchi, A.Wakahara, S.Sato, T.Ohshima, “Study of proton irradiation effects on p- and n-type GaN based on two-terminal resistance dependence on 380 keV proton fluence”, IEICE Transactions on Electronics, E97-C, 409 (2014).
    https://doi.org/10.1587/transele.e97.c.409

■2013年

  • C.Y.Lee, H.Sekiguchi, H.Okada, A.Wakahara, “Demonstration of a large-area AlGaN/GaN Schottky barrier photodetector on Si with high detection limit”, Semiconductor Science and Technology, 28, 094005 (2013).
    https://doi.org/10.1088/0268-1242/28/9/094005